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  Datasheet File OCR Text:
 Ordering number:EN5906
N-Channel Silicon MOSFET
FTS2002
DC-DC Converter Applications
Features
* Low ON resistance. * 4V dirve. * Mount height 1.1mm.
Package Dimensions
unit:mm 2147
3.0 0.975 0.65
[FTS2002]
0.95
8
5
0.5
1
4
0.25
0.125
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
0.1
1.0 1.2max
1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain SANYO:TSSOP8
4.5 0.95
6.4
Ratings 30 20 5 30 1.5 150 -55 to +150
Unit V V A A W C C
Mounted on a ceramic board (1000mm2x0.8mm)
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=3A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 8 10 24 37 700 380 180 32 50 Conditions Ratings min 30 100 10 2.5 typ max Unit V A A V S m m pF pF pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1498TS (KOTO) TA-1282 No.5906-1/4
FTS2002
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0 Ratings 15 180 90 80 22 5 6 1.0 1.2 Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
10V 0V VIN VDD=15V ID=5A RL=3
VIN PW=10s D.C.1%
D
VOUT
G
FTS2002 P.G 50
S
8
I D - VDS
8V 6V 4V 3.5 V
10V
3V
10 9 8
I D - VGS
VDS =10V
7
Drain Current, I D - A
Drain Current, I D - A
6 5 4 3 2 1
7 6 5 4 3 2 1
VGS=2V
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0
0.5
1.0
1.5
2.0
25C
2.5
Ta=- 25
3.0
Drain-to-Source Voltage, VDS - V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23
Gate-to-Source Voltage, VGS - V
VDS=10V
60
| yf s | - I D
Static Drain-to-Source On-State Resistance, RDS(on) - m
R DS(on) - VGS
Tc=25C
Forward Transfer Admittance,| yfs | - S
50
ID=5A 3A
25
C
40
5C -2 a= C T 75
30
20
10
0
0
2
4
6
8
10
12
14
16
18
C
20
2.5V
Drain Current, ID - A
Gate-to-Source Voltage, VGS - V
75C
No.5906-2/4
FTS2002
100
R DS(on) - Tc
Drain Reverse Current, IDR - A
Static Drain-to-Source On-State Resistance, RDS(on) - m
90 80 70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40 60 80 100 120 140
10 7 VGS=0 5 3 2 1.0 7 5 3 2
I DR - VSD
ID =3A
,VGS =
4V
V
25C
0.6
3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0
Case Temperature, Tc - C
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 30
Diode Forward Voltage, VSD - V
f=1MHz
10
Ciss,Coss,Crss - VDS
Drain-to-Source Voltage,VGS - V
VGS - Qg
VDS=10V 9 ID =5A
8 7 6 5 4 3 2 1
Ciss,Coss,Crss - pF
Ciss
Coss
Crss
0 0
5
10
Ta=7
ID =5A,VG
15
-25C
20
S =10
0.1 7 5
5C
25
Drain-to-Source Voltage, VDS - V
1000
Total Gate Charge, Qg - nC
SW Time - I D
VDD =15V 7 VGS=10V
5
Switching Time, SW Time - ns
3 2
Drain Current, I D - A
,,,,, ,,,,, ,,,,,
5 I DP = 3 0 A 3 2 10 7 5 3 2
ASO
10s 100s 1m s
10m s
tr
ID=5A
10
t d(off
100 7 5 3 2 10 7 0.1
0m
)
s
tf
1.0 7 5 Operation in this area 3 2 is limited by RDS(on).
DC
op
era
tio
n
t d(on)
2 3 5 7 1.0 2 3 5 7 10 2
0.1 7 Ta=25C 5 1pulse 3 Mounted on a ceramic board (1000mm2x0.8mm) 2 23 5 7 1.0 2 3 5 7 10
2
3
5
Drain Current, ID - A
2.0
Drain-to-Source Voltage, VDS - V
P D - Ta
Allowable Power Dissipation, PD - W
1.5
M ou nte d
1.0
on a
cer am ic bo ard
0.5
(10 00 mm
2
x0
.8m m)
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -C
No.5906-3/4
FTS2002
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 1998. Specifications and information herein are subject to change without notice.
PS No.5906-4/4


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